These highly efficient power devices provide increased power density and bus voltage match LLC and offer zero-voltage-switching phase-shift
Recent technology trends for SMPS design in industrial applications include the need for high efficiency and power density as well as increased bus voltages, calling for the need for power devices with 650 V breakdown voltage.
Now Infineon Technologies with its 650 V CoolMOS
Extending the voltage range of the renowned CoolMOS CFD7 family, the 650 V device succeeds the CoolMOS CFD2. The added 650 V products match LLC and zero-voltage-switching phase-shift full-bridge topologies, delivering numerous advantages compared to previous generations. The additional 50 V breakdown voltage, an integrated fast body diode and improved switching performance make the product family a perfect fit for contemporary designs. Very low reverse-recovery charge and excellent thermal behaviour add to the benefits.
The switching losses, as well as RDS(on) dependency over-temperature, are significantly reduced. The product family provides very good hard-commutation ruggedness. Thanks to the improved gate charge (Qg) and the fast switching performance, the 650 V CoolMOS CFD7 family increases efficiency over the whole load range.
For SMPS applications, these MOSFETs provide outstanding light-load and improved full-load efficiency. Furthermore, best-in-class RDS(on) enables customers to increase the power density level of SMPS at a competitive price.
The 650 V CoolMOS CFD7 is available in TO-220, TO-247 and TO-247 4-pin packages.