For infrastructure, cloud computing and graphic card applications, the devices feature integrated current and temperature monitoring
The power stages combine power MOSFETs and an advanced driver IC. The devices’ high energy efficiency is a result of their internal MOSFETs’ state of the art TrenchFET Gen IV technology, which delivers industry benchmark performance to significantly reduce switching and conduction losses. The SiC8xx smart power stages deliver peak efficiency above 93 % in various application conditions. A diode emulation mode can be enabled at light loads for high efficiency over the full load range.
While solutions that monitor power consumption using inductor DCR sensing offer current reporting accuracy of 7 %, the SiC8xx family utilises low side MOSFET sensing for accuracy of < 3 %. This translates into better performance and improved thermal management for high current processors and SoCs such as those from Intel Corporation, Advanced Micro Devices, Inc. and Nvidia Corporation. The devices are optimised for synchronous buck converters; multi-phase VRDs for CUPs, GPUs, and memory and DC-DC VR modules.
The SiC8xx smart power stages offer a wide input range of 4.5 V to 21 V and high switching frequencies of up to 2 MHz. Fault protection features include high side MOSFET short and overcurrent alerts, over-temperature protection and undervoltage lockout (UVLO). The SiC8xx family supports 3.3 V and 5 V PWM logic with tri-state for compatibility with a wide range of PWM controllers.
Samples and production quantities of the smart power stages are available now.