Friday, March 29, 2024

Electronic Devices and Circuit Theory

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Here is a presentation on Electronic Devices and Circuit Theory. This presentation covers,

  • Semiconductor Diodes
  • Diodes
  • Diode Characteristics
  • Semiconductor Materials
  • Doping
  • p-n Junctions
  • Diode Operating Condition
  • Actual Diode Characteristics
  • Majority an and Minority Carriers
  • Zener Region
  • Forward Bias Voltage
  • Temperature Effects
  • Resistance Levels
  • DC (Static) Resistance
  • AC (Dynamic) Resistance
  • Average AC Resistance
  • Diode Equivalent Circuit
  • Diode Capacitance
  • Reverse Recovery Time (trr)
  • Diode Specification Sheets
  • Diode Symbol and Packaging
  • Diode Testing
  • Diode Checker
  • Ohmmeter
  • Curve Tracer
  • Other Types of Diode
  • Zener Diode
  • Light-Emitting Diode (LED)
  • Diode Arrays

Electronic devices and circuit theory: An overview

A diode is the simplest semiconductor device with a very vital role in electronic systems, with characteristics matching a switch. It appears in a range of electronics applications and uses semiconductors. The ideal diode is a short circuit for the region of conduction and open circuit in the region of non-conduction. This is done so by altering the properties of the semiconductor involved in the making.

Doping

The characteristics of semiconductor materials can be altered significantly by the addition of certain impurity atoms into the relatively pure semiconductor material. These impurities, although only added to perhaps 1 part in 10 million, can alter the band structure sufficiently to totally change the electrical properties of the material.
A semiconductor material that has been subjected to the doping process is
called an extrinsic material.
There are two extrinsic materials of immeasurable importance to semiconductor device fabrication: n-type and p-type.
A p-type material is formed by doping a pure germanium or silicon crystal with impurity atoms having three valence electrons. The elements most frequently used for this purpose are boron, gallium, and indium.
An n-type material is created by introducing impurity elements with five valence electrons (pentavalent) such as antimony, arsenic, and phosphorus. There are four bonds in each atom. However an additional fifth electron is added by the impurity atom, which is unassociated with any particular bond.

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