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Tag: HfO2-Based FeRAM

CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node that advances this energy-saving technology closer to commercialization. The breakthrough includes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small as 0.16 µm², and solder...

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