The integrated half-bridge IC can perform sink and source of up to 600mA and comes with built-in safety features, reducing bill of materials
The STDRIVE101 embeds three half-bridge drivers for external N-Channel MOSFETs, each able to sink and source up to 600mA gate current. Integrated bootstrap diodes and a 50mA 12V low-dropout (LDO) regulator minimise the bill of materials. A comparator for over-current detection using external resistors and drain-source voltage monitoring of each MOSFET for short-circuit protection are also provided.
Essential safety features are built-in, including internally generated dead-time to prevent cross-conduction, over-temperature shutdown and Under-Voltage Lockout (UVLO) on both the low-side and high-side sections to prevent the MOSFETs from operating in low efficiency or dangerous conditions.
A DT/MODE selection pin lets designers choose to control switching with individual high-side and low-side signals or a single PWM signal and enable input. A standby pin sets the STDRIVE101 in a low-power mode with the LDO turned off to maximise energy savings when idle.
The STDRIVE101 is in production now and available in a 24-pin VFQFN 4mm x 4mm package from STMicroelectronics.