Saturday, April 20, 2024

High Surge Resistant SiC Schottky Barrier Diodes Featuring Low VF

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ROHM has recently announced the 3rd generation SiC Schottky Barrier Diodes (SBDs) for power supply PFC circuits in servers and high performance PCs.
The SCS3 series adopts a structure that improves upon the VF characteristics of ROHM’s 2nd Generation SiC SBDs (1.35V @ 25C) while providing increased surge resistance. This helps in efficiency, enabling support for power supply PFC circuits in servers, high-performance PCs, and the like.
In recent years, power components that provide higher efficiencies are being required in order to improve power conversion efficiency and energy savings in the power electronics market, which includes industrial power supplies, solar power systems, electric vehicles, and home appliances.
Compared to conventional silicon products, SiC devices feature superior material characteristics, making them the preferred choice in power applications. Particularly in equipment such as servers where maximum power supply efficiency is demanded, the high-speed recovery characteristics of SiC SBDs have proven effective in increasing device efficiency when used in PFC circuits. Surge current resistance is also an important consideration in high power applications.
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Key Features

  • High surge current resistance

ROHM3

ROHM’s 3rd generation SiC SBDs adopt a JBS (Junction Barrier Schottky) structure that provides higher surge current resistance with excellent leakage characteristics.

  • Industry’s lowest forward voltage (VF=1.35V@25°C, 1.44V@150°C)

ROHM4

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Optimized processes and device structure have made it possible to improve upon the industry’s lowest VF characteristics of ROHM’s 2nd generation SiC SBDs, reducing conduction loss for greater efficiency and performance.
  • Low current leakage

Generally, as forward voltage is reduced reverse current leakage increases. However, ROHM’s JBS structure minimizes leakage current along with forward voltage characteristics, resulting in 20x less leakage compared to 2nd Generation SiC SBDs at the same rated voltage (650V、Tj=150℃).

  • Lineup

ROHMROHM’s 3rd Generation SiC SBDs are currently available in the TO-220ACP package. A surface mount type (TO-263AB) is scheduled for future release based on market demands.

Applications

Power supply PFC circuits for PCs, servers, AC, and more.


Terminology
  • PFC (Power Factor Correction) Circuit
    A circuit that suppresses peak current in order to limit the harmonic current generated within the power supply, contributing to greater energy savings.
  • Forward Voltage (VF)
    Refers to the voltage drop that occurs when current flows from positive to negative. The lower the value the greater the efficiency.
  • Surge Resistance
    The capability of protecting against current that momentarily exceeds steady state (i.e. in power supply circuits due to lightning).

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