Samsung Electronics Develops 12nm DDR5 DRAM

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Samsung 12nm DDR5 DRAM Credit: Samsung Electronics
 

Samsung said that that 12nm-class DRAM could process 60 GB of data in one second.

Samsung Electronics announced that it has developed a 16-gigabit (Gb) double data rate five (DDR5) DRAM using a 12nm-class process node.

The South Korea-based technology behemoth said that the product has been evaluated for compatibility with CPU manufacturer AMD and would be mass-produced in 2023.

Samsung’s latest DRAM is made with its fifth-generation 10nm class process node. The company said that its 12nm-class DRAM could unlock speeds of up to 7.2 gigabits per second (Gbps). This translates into processing 60 GB of data in one second. Power consumption has been improved by 23% compared to its predecessor. The company said that it applied a new high-k material to increase the capacitor’s volume and applied new designs to complete the new process node.

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Products & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centres and AI-driven systems,” he added.

Samsung plans to launch more products in its 12nm class DRAM range for applications in data centres, AI, and high-performance computing.

Samsung is a major manufacturer of electronic components such as lithium-ion batteries, semiconductors, image sensors, camera modules, and displays for clients such as Apple, Sony, HTC, and Nokia. It is one of the largest manufacturers of mobile phones and smartphones. It has a strong presence in the markets for televisions, wearable devices, tablets, digital appliances, network systems, memory, system LSI, foundry and LED solutions, as well.


 

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