Power dense IGBTs with reduced cell pitch deliver scalable performance and enhanced reliability for high voltage solar and ESS inverter platforms.
Rising power density and efficiency requirements in solar inverters and energy storage systems are placing greater demands on power semiconductor devices. Conventional IGBT designs face limitations in current density, thermal handling, and safe operating margins under high voltage and high current conditions.
Magnachip Semiconductor Corporation has launched a new generation of discrete IGBTs targeting solar inverter and industrial ESS applications. The series includes 650 V and 1200 V devices designed to increase current capacity and operational stability while supporting a wide range of system power ratings.
The series with voltage ratings include:
- MBQ40T65S6FSTH: 650 V
- MBQ50T65S6FSTH: 650 V
- MBQ75T65S6FSTH: 650 V
- MBQ40T120RFSTH: 1200 V
- MBQA75T120RFSTH: 1200 V
- MBQA100T120RFSTH: 1200 V
The devices are based on advanced field stop trench technology with a refined process architecture. A reduction in cell pitch of approximately 40 percent increases current density within the same die area, while enhanced reverse bias safe operating area improves robustness during high stress switching events. The IGBTs are offered in TO 247 and TO 247 Plus packages, enabling compatibility with different thermal and mechanical design requirements.
Key features of the series include:
- Advanced field stop trench IGBT architecture
- 650 V and 1200 V voltage ratings
- Cell pitch reduction of approximately 40 percent
- Improved reverse bias safe operating area by over 30 percent
- Multiple current ratings supporting scalable inverter designs
- Availability in TO 247 and TO 247 Plus packages
Hyuk Woo, CTO of the company, says, “This new generation IGBT series enhances efficiency and reliability through refined process technologies, building on our market proven technology and production capabilities.”
