HomeElectronics NewsGaN Transistors for Faster Power Conversion

GaN Transistors for Faster Power Conversion

GaN transistors support switching, lower losses, smaller power components, and higher power density in data centres, robots, and industrial systems.

Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data Centers and Robotics
Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data Centres and Robotics

Renesas Electronics has expanded its gallium nitride (GaN) portfolio with its first 100V enhancement-mode (E-mode) GaN discrete power transistors. The devices target power-conversion applications that require high switching speeds and power density, including AI data centres, humanoid robots, factory automation, industrial motor drives, power tools, and solar microinverters.

The company claims that the portfolio delivers up to 35% lower hard-switching figure of merit (FOM) and up to 63% lower soft-switching FOM than comparable GaN devices.

The transistors use a silicon-compatible footprint, allowing designers to adopt them in existing power designs with limited PCB changes. They are available in standard MOSFET-compatible packages and come with bottom- and dual-side cooling options.

Power converters in data centres typically switch at a few hundred kilohertz. However, the move towards 800V DC power distribution and 48V bus architectures in AI servers and industrial systems is increasing the need for converter stages that can operate at megahertz-range frequencies. Higher switching frequencies can reduce the size of magnetic and passive components while increasing power density.

Using 100V GaN devices in these power-conversion stages can reduce switching losses and the size of passive components. It can also reduce cooling requirements, which can lower system energy consumption and bill-of-materials costs.

The new transistors are based on Renesas’ low-voltage E-mode GaN technology. They have low total gate charge and output charge, which reduces the time during which voltage and current overlap during switching. The devices also have zero reverse recovery charge, which avoids reverse-recovery losses during switching.

Low on-resistance helps reduce conduction losses. The company says the devices can provide 40% to 70% lower switching losses and up to twice the system-level power density, depending on the power-conversion design and application. The package options and cooling configurations give designers flexibility when adapting the devices to different power levels and thermal requirements.

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Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at Electronics For You, specialising in embedded systems, development boards, and IoT cloud solutions. With a Master’s degree in Signal Processing, she combines strong technical knowledge with hands-on industry experience to deliver clear, insightful, and application-focused content. Nidhi began her career in engineering roles, working as a Product Engineer at Makerdemy, where she gained practical exposure to IoT systems, development platforms, and real-world implementation challenges. She has also worked as an IoT intern and robotics developer, building a solid foundation in hardware-software integration and emerging technologies. Before transitioning fully into technology journalism, she spent several years in academia as an Assistant Professor and Lecturer, teaching electronics and related subjects. This background reflects in her writing, which is structured, easy to understand, and highly educational for both students and professionals. At Electronics For You, Nidhi covers a wide range of topics including embedded development, cloud-connected devices, and next-generation electronics platforms. Her work focuses on simplifying complex technologies while maintaining technical accuracy, helping engineers, developers, and learners stay updated in a rapidly evolving ecosystem.

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