A full-bridge silicon carbide module with 8mΩ on-resistance combines enhanced thermal management, high-current connections, and extended reliability testing for high-power energy conversion systems.
The G4H08MT23GB4 is a 2300V silicon carbide (SiC) full-bridge power module designed for high-power conversion in solid-state transformers, grid-scale battery energy storage systems (BESS), solar inverters, AI data centres, and megawatt electric vehicle (EV) charging infrastructure. It features an on-state resistance (RDS(on)) of 8mΩ and uses fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology to reduce conduction losses.
The module by Navitas Semiconductor uses the SiCPAK form factor and is intended for applications requiring efficient power conversion, high power density, and reliable operation at elevated voltages. In solid-state transformers, it can support the conversion of grid power into high-voltage direct current (DC) for AI data centre power distribution.
The key features are:
- 2300V voltage rating for ultra-high-voltage power conversion.
- 8mΩ on-state resistance.
- AlN AMB substrate with isolation exceeding 5kV.
- Epoxy-resin potting with 10× the thermal conductivity of silicone gel.
- Four variants covering standard and high-current configurations with optional pre-applied TIM.
For thermal management, the module incorporates an aluminium nitride (AlN) active-metal-brazed (AMB) substrate that improves heat spreading and provides electrical isolation exceeding 5kV. Its epoxy-resin potting helps reduce internal mechanical stress and restrict moisture and contaminant ingress. The material offers ten times the thermal conductivity of silicone gel.
The module also features high-current press-fit pins with twice the current-carrying capability per pin compared with standard press-fit connections. An optional pre-applied thermal interface material (TIM) simplifies heatsink assembly.
The module family is designed for qualification under an extended AEC-Plus reliability benchmark, which includes dynamic reverse-bias and gate-switching tests, extended power and temperature cycling, and high-voltage humidity testing. These tests address the demanding operating conditions of grid infrastructure and high-power conversion equipment.
The family includes standard and high-current versions, with or without pre-applied TIM. An optional double-pulse test board, EVB-UHVSIC-GB-E-DPT-1, is available to evaluate switching performance during converter development. Samples are available.
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