Automotive-grade 1200 V MOSFETs with very low switching losses provide a combination of high power density and efficiency.
Infineon Technology has launched its new generation of 1200 V CoolSiC MOSFETs in the TO263-7 package, which the company claims to be suitable for automotive applications. According to the press release issued by the company, the automotive-grade silicon carbide (SiC) MOSFET provides a combination of high power density and efficiency. The MOSFETs enable bi-directional charging and substantially reduce system costs for on-board charging (OBC) and DC-DC applications. According to the company’s claim, the MOSFETs deliver best-in-class switching performance surpassing the first generation by reducing switching losses by 25 per cent. This enhanced switching behaviour enables high-frequency operation, leading to smaller system sizes and increased power density.
The press release highlights that the new generation features low resistance and reduces conductive losses across the temperature range of -55°C to 175°C. According to the company’s claim, the MOSFET boasts a creepage distance of 5.89 mm, which fulfils the requirements of 800 V systems while simultaneously minimizing the need for additional coating measures. The company claims to offer various benefits with the new generation MOSFETs. These include enhanced efficiency, enabling higher operating frequencies, increased power density, reduced cooling requirements, as well as streamlined system complexity and cost reduction.
“As a key component for our future generation OBC platform, Infineon’s new 1200 V CoolSiC Trench MOSFET features high voltage rating and qualified robustness. These benefits help us to create a compatible design to manage our state-of-art technical solutions, cost optimization and massive market delivery,” said Shen Jianyu, Vice President, Technical Executive Manager at KOSTAL ASIA.
Some of the key specifications of the MOSFET include:
- Operating Temperature: -55 °C to 175 °C
- Total maximum power: 882 W
- Package: TO-263-7
- Polarity: N type
- VDS max: 1200 V
- RDS (on) : 8.7 mΩ
- ID max: 205 A
- VGSS: 0(off) 20(on)