The development is expected to allow a cost-effective and low-power consuming solution for wide range of electronics applications
Hua Hong Semiconductor Limited, a pure-play foundry focused on embedded non-volatile memory (eNVM), power discrete, analogue & power management, and logic & RF, has launched a 90nm ultra-low-leakage (ULL) embedded flash (eFlash) and electrically erasable programmable read-only memory (EEPROM) process platform to meet the needs of large-capacity microcontroller unit (MCU). The process platform offers a cost-effective solution with low power consumption, suitable for Internet of Things (IoT), wearables, industrial and automotive electronics applications.
The 90nm ULL eFlash process platform’s leakage of 1.5V core N-Type and P-Type MOS transistors reaches 0.2pA/um, extending the standby time of MCU devices. The Embedded Non-Volatile Memory (eNVM) IP of this platform has unique advantages such as 100,000 to 500,000 endurance cycles and read speed of 30ns. The platform also features highly integrated logic, exceeding 400K gate/mm2 and capable of reducing the chip area.
An important advantage of this process platform is the integration of the company’s split gate NORD eFlash technology. It has a small cell size and area embedded NOR flash IP at 90nm. Also, fewer layers of mask help in further reducing the manufacturing cost of MCU, especially large-capacity MCU products. The platform supports RF, eFlash and EEPROM.
“While improving the 8-inch platform, it is speeding up the capacity expansion and technology R&D of the 12-inch production line. IoT and automotive electronics are incremental markets for MCU applications. The launch of the 90nm ultra-low-leakage eFlash technology platform further makes available more foundry options for Hua Hong Semiconductor’s MCU customers in ultra-low power consumption applications,” said Dr Kong Weiran, Executive Vice President at Hua Hong Semiconductor.