Tuesday, May 21, 2024

Fourth Generation Power MOSFET In PowerPAK Package

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Fourth-Generation Device Boosts Power Ratings and Density Compared to D²PAK, Reduces Conduction and Switching Losses to Enhance Efficiency.

Vishay Intertechnology, has announced the launch of its fourth-generation 600 V E Series power MOSFET, the SiHR080N60E, housed in the advanced PowerPAK 8 x 8LR package. This latest development marks a significant stride in technology aimed at enhancing efficiency and power density in various applications including telecom, industrial, and computing sectors. It represents a breakthrough in MOSFET design, achieving a 27% reduction in on-resistance and an impressive 60% decrease in the resistance times gate charge (FOM) — a critical performance metric for 600 V MOSFETs utilised in power conversion. This improvement is pivotal for applications that demand high efficiency in power factor correction (PFC) and DC/DC conversion stages, typical in devices such as servers, supercomputers, UPS systems, and more. 

The key specifications include:

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  • Compact dimensions: 10.42 mm x 8 mm x 1.65 mm.
  • Significantly reduced footprint: 50.8% smaller than the previous D²PAK package.
  • Height reduction: 66% lower than D²PAK, ideal for space-constrained applications.
  • Superior thermal performance: Features top-side cooling.
  • Low thermal resistance: Junction-to-case (drain) thermal resistance of only 0.25 °C/W.
  • Increased current capacity: Allows for 46% higher current than the D²PAK at the same resistance level.

This MOSFET utilizes the company’s latest E Series superjunction technology, which provides low on-resistance of just 0.074 Ω at 10 V and an ultra-low gate charge of 42 nC, leading to an industry-best FOM of 3.1 Ω*nC. These features significantly reduce conduction and switching losses in power systems over 2 kW, enhancing overall energy efficiency. The device also includes improved switching performance attributes with low effective output capacitances, essential for high-performance power applications.

It is also RoHS-compliant, halogen-free, and designed to handle overvoltage transients in avalanche mode, ensuring robust performance through 100% UIS testing. The comapny is currently offering samples and has begun production, with details on lead times available through local sales offices. 

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.


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