The 1200V MOSFETs enhance power technology for applications like electric vehicle charging, energy storage, and industrial power supplies, ensuring efficiency and reliability.
![MOSFETs](https://www.electronicsforu.com/wp-contents/uploads/2023/11/unnamed-2-500x322.jpg)
SemiQ has recently expanded its QSiC Silicon Carbide module portfolio by introducing a new family of 1200V MOSFETs, available with or without 1200V SiC Schottky Diodes in a SOT-227 package. The company claims that the SiC modules, made from high-performance ceramics, are designed to deliver reliable performance under harsh conditions. They boast features like high breakdown voltage, high-temperature operation, low Rds(On) shift across the operating temperature range, and exceptional gate oxide stability and ruggedness.
The modules are suited for various applications, including electric vehicle charging, DC-DC converters, energy storage systems, and power supplies in medical, solar, wind energy, and data centre sectors.
The design is characterised by low switching losses and minimal junction-to-case thermal resistance, ensuring efficient operation. It is notably rugged and designed for easy mounting. Additionally, it allows for direct support to a heatsink, thanks to its isolated package, enhancing its practicality and ease of use.
The high-speed switching SiC MOSFETs feature a Kelvin reference, ensuring stable operation. These components are also simple to drive, combining advanced speed capabilities with user-friendly operation.
To ensure top-notch quality, all QSiC modules undergo rigorous wafer-level gate burn-in testing for gate oxide stability and other stress tests like gate stress and high-temperature reverse bias drain stress. These procedures are critical for meeting industrial-grade quality standards.
Some of the key specifications of the modules include:
- Drain-Source Voltage: 1200V
- Continuous Drain Current: 81-113A
- Body Diode Drain Current: 97A
- Pulsed Drain Current: 250A
- Power Dissipation: 395W
- Operating & Storage Temperature: -55…175 °C
Dr. Timothy Han, President at SemiQ, said, “We are delighted with the customer input and needs for our new family of QSiC™ high-power modules and thank our SemiQ team, who have worked tirelessly to build and qualify our latest QSiC™ modules.”