Thursday, May 16, 2024

High-Performance 1200V MOSFETs For Diverse Applications

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The 1200V MOSFETs enhance power technology for applications like electric vehicle charging, energy storage, and industrial power supplies, ensuring efficiency and reliability.


SemiQ has recently expanded its QSiC Silicon Carbide module portfolio by introducing a new family of 1200V MOSFETs, available with or without 1200V SiC Schottky Diodes in a SOT-227 package. The company claims that the SiC modules, made from high-performance ceramics, are designed to deliver reliable performance under harsh conditions. They boast features like high breakdown voltage, high-temperature operation, low Rds(On) shift across the operating temperature range, and exceptional gate oxide stability and ruggedness.

The modules are suited for various applications, including electric vehicle charging, DC-DC converters, energy storage systems, and power supplies in medical, solar, wind energy, and data centre sectors.

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The design is characterised by low switching losses and minimal junction-to-case thermal resistance, ensuring efficient operation. It is notably rugged and designed for easy mounting. Additionally, it allows for direct support to a heatsink, thanks to its isolated package, enhancing its practicality and ease of use.

The high-speed switching SiC MOSFETs feature a Kelvin reference, ensuring stable operation. These components are also simple to drive, combining advanced speed capabilities with user-friendly operation.

To ensure top-notch quality, all QSiC modules undergo rigorous wafer-level gate burn-in testing for gate oxide stability and other stress tests like gate stress and high-temperature reverse bias drain stress. These procedures are critical for meeting industrial-grade quality standards.

Some of the key specifications of the modules include:

  • Drain-Source Voltage: 1200V
  • Continuous Drain Current: 81-113A
  • Body Diode Drain Current: 97A
  • Pulsed Drain Current: 250A
  • Power Dissipation: 395W
  • Operating & Storage Temperature: -55…175 °C

Dr. Timothy Han, President at SemiQ, said, “We are delighted with the customer input and needs for our new family of QSiC™ high-power modules and thank our SemiQ team, who have worked tirelessly to build and qualify our latest QSiC™ modules.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.


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