The MOSFETs are designed for onboard chargers and DC/DC converters, providing robust performance in hard—and soft-switching topologies.
The STPOWER MDmesh DM9 AG series of 600V/650V super-junction MOSFETs from STMicroelectronics provides efficiency and ruggedness for onboard chargers (OBCs) and DC/DC converter applications in complex- and soft-switching topologies. Apart from these, the key applications include an auxiliary power supply.
With RDS(on) per die area and gate charge, the silicon-based devices combine low energy losses with switching performance, setting a new figure of merit. The technology ensures a tighter gate-source threshold voltage spread, resulting in sharper switching for lower turn-on and turn-off losses.
In addition, body-diode reverse recovery is improved, leveraging a new process that increases the MOSFETs’ ruggedness. The diode’s low reverse-recovery charge and fast recovery time make the series suitable for phase-shift zero-voltage switching topologies that demand efficiency.
The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK SMIT topside-cooled surface-mount packages are also available.
Some of the key features of the MOSFETs include:
- AEC-Q101 qualified
- Low Qg and RDS(on)
- Fast recovery intrinsic diode
- Extremely high dv/dt ruggedness (120 V/ns)
- Extremely high di/dt ruggedness (1300 A/µs)
The first device in the series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.
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