Wednesday, July 24, 2024

New Gen Of SiC Schottky Barrier Diodes For Automotive Applications

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These devices are Automotive Electronics Council (AEC)-Q101-qualified and help EV achieve high levels of reliability and ruggedness

The rapid growth of vehicle electrification has led to the requirement of innovative power technologies such as Silicon Carbide (SiC) for high-voltage automotive systems ranging from motors to onboard charging and DC-DC converters.

So, with the newly-qualified 700 and 1200V SiC Schottky Barrier Diode (SBD) power devices by Microchip Technology, Electric Vehicle (EV) system designers can come up with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options.

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High Ruggedness

Unlike other SiC devices that degrade under extreme conditions, these devices have demonstrated no degradation in performance, increasing the application life. The SiC SBD ruggedness testing demonstrates 20 per cent higher energy withstand in Unclamped Inductive Switching (UIS), and among the lowest leakage currents at elevated temperatures, increasing system life and enabling a more reliable operation.

The SiC automotive power devices complement the company’s broad portfolio of controllers, analogue and connectivity solutions providing designers with total system solutions for electric vehicles and charging stations. Also provided is a broad portfolio of 700, 1200 and 1700V SiC SBD and Metal Oxide Silicon Field Effect Transistor (MOSFET) power modules that utilise the newest generation of SiC die. Also, the dsPIC digital signal controllers deliver performance, low power consumption and flexible peripherals.

For increased system efficiency, while maintaining high quality, the AEC-Q101-qualified devices maximise system reliability and ruggedness and enable stable and lasting application life. The devices’ superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity.

Microchip’s AEC-Q101-qualified SiC SBD devices are supported with SPICE and PLECS simulation models and MPLAB Mindi Analog Simulator. Also available is a PLECS reference design model that uses Microchip’s SBDs (1200V, 50A) as part of the power stage — the Vienna 3-Phase Power Factor Correction (PFC) reference design.

Microchip’s AEC-Q101 qualified 700 and 1200V SiC SBD devices (also available as die for power modules) for automotive applications are available now from Microchip Technology or authorised worldwide distributor.


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