Improved Phased Array Radar Performance with GaN Power Amplifier

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  • Qorvo’s GaN power amplifier provides 50 per cent power increase using efficient and reliable gallium nitride on silicon carbide (GaN-on-SiC) process technology
  • This along with other features makes the device suitable for designing high power radar solutions

Qorvo has introduced a GaN power amplifier (PA) that delivers a 50 per cent increase in power for improved range, performance and multi-target tracking in S-band (2-4 GHz) phased array radars.

With 150 watts of power for the 2.9-3.5 GHz frequency range, the QPA3070 achieves 58 per cent power added efficiency (PAE) and 28 dB power gain, possible with the help of ultra-reliable and highly efficient gallium nitride (GaN) on silicon carbide (GaN-on-SiC) process technology, which offers superior efficiency, power density and affordability.

Key features

  • Frequency range: 2.9-3.5 GHz
  • PSAT: 50 dBm
  • PAE: 58%
  • Power gain: 28 dBm

The device enables engineers to design higher power radar solutions with significant size, weight, power and cost (SWAP-C) improvements and bring them to market faster.

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“Qorvo’s GaN products are recognized throughout the industry for power and performance. With more than 30 years of experience delivering aerospace and defence solutions, we have a unique insight into the critical role that power plays in phased array systems. That knowledge is at the heart of this industry-first 150W power amplifier optimized for defence and commercial radar,” said Roger Hall, general manager of Qorvo’s High Performance Solutions (HPS) business.

The QPA3070 is available now in a small and cost-effective surface mount package of 7x7x0.85mm. 


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