Nexperia has released three new wafer-level 12 & 30V MOSFETs with high efficiency. The PMCA14UN, a 12V, N-channel trench MOSFET comes in a DSN1010 package, whereas the 30V PMCB60XN and PMCB60XNW N-channel small-signal trench MOSFETs come in a DSN1006 package and are rated for drain current up to 4A. All the three MOSFETs feature low RDS (on) and are specially designed for space-constrained applications where battery runtime is critical. The MOSFETs are suitable for use in applications such as smartphones, smart watches, hearing aids, and earphones.
According to the company, the MOSFETs have up to 25% lower RDS(on) than competing devices. The lower RDS(on) reduces self-heating, thus, minimising energy losses and increasing efficiency in load switching and battery management. The 30V PMCB60XN and PMCB60XNE have a maximum RDS(on) of 50mΩ and 55mΩ respectively, while the 12V PMCA14UN has a max RDS(on) of 16mΩ at VGS = 4.5 V. The 30 V PMCB60XNE comes with ESD protection rated to 2kV (human body model – HBM) integrated into the tiny 1.0mm × 0.6mm × 0.2mm DSN1006 outline.
The company says that all three MOSFETs will save power and simplify thermal management in space-constrained applications. The PMCB60XN, PMCB60XNE and 12V PMCA14UN are in production now and available from Nexperia.