New Gate Driver ICs For 5G And LTE Macro Base Stations

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The IC family enables high power density, high efficiency and robustness while comprising of four variants that help reduce switching losses

Fostering growth in DC-DC telecom infrastructures for mobile networks is the new dual-channel junction-isolated gate driver IC family, the EiceDRIVER 2EDL8, which allow for high power density, high efficiency and robustness in isolated DC-DC step-down converters/telecom bricks that strengthen 5G macro base stations and LTE telecom infrastructures.

The 2EDL8 family comprises four variants that offer two different pull-up currents and two different input configurations. The 3 A version is ideally suited for retrofit designs, while the 4 A version is recommended to reduce MOSFET switching losses.

The 2EDL8 features an integrated 120 V bootstrap diode and precise channel-to-channel propagation delay matching of ± 2 ns typically. All products in the family have industry-standard PG-VDSON-8 leadless packages and pin-out.

The 2EDL802x permits both channels to operate independently. This device is optimal for diagonally driven full-bridges on the primary side, as well as for the synchronous rectification stage on the secondary side for reducing losses during the freewheeling phase.

The 2EDL812x has a differential input structure and built-in shoot-through protection that makes it suitable for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.

All four product variants of the EiceDRIVER 2EDL family are available now from Infineon Technologies AG.


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