HomeElectronics NewsHigh-Performance 1200V MOSFETs For Diverse Applications

High-Performance 1200V MOSFETs For Diverse Applications

The 1200V MOSFETs enhance power technology for applications like electric vehicle charging, energy storage, and industrial power supplies, ensuring efficiency and reliability.

MOSFETs

SemiQ has recently expanded its QSiC Silicon Carbide module portfolio by introducing a new family of 1200V MOSFETs, available with or without 1200V SiC Schottky Diodes in a SOT-227 package. The company claims that the SiC modules, made from high-performance ceramics, are designed to deliver reliable performance under harsh conditions. They boast features like high breakdown voltage, high-temperature operation, low Rds(On) shift across the operating temperature range, and exceptional gate oxide stability and ruggedness.

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The modules are suited for various applications, including electric vehicle charging, DC-DC converters, energy storage systems, and power supplies in medical, solar, wind energy, and data centre sectors.

The design is characterised by low switching losses and minimal junction-to-case thermal resistance, ensuring efficient operation. It is notably rugged and designed for easy mounting. Additionally, it allows for direct support to a heatsink, thanks to its isolated package, enhancing its practicality and ease of use.

The high-speed switching SiC MOSFETs feature a Kelvin reference, ensuring stable operation. These components are also simple to drive, combining advanced speed capabilities with user-friendly operation.

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To ensure top-notch quality, all QSiC modules undergo rigorous wafer-level gate burn-in testing for gate oxide stability and other stress tests like gate stress and high-temperature reverse bias drain stress. These procedures are critical for meeting industrial-grade quality standards.

Some of the key specifications of the modules include:

  • Drain-Source Voltage: 1200V
  • Continuous Drain Current: 81-113A
  • Body Diode Drain Current: 97A
  • Pulsed Drain Current: 250A
  • Power Dissipation: 395W
  • Operating & Storage Temperature: -55…175 °C

Dr. Timothy Han, President at SemiQ, said, “We are delighted with the customer input and needs for our new family of QSiC™ high-power modules and thank our SemiQ team, who have worked tirelessly to build and qualify our latest QSiC™ modules.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at Electronics For You, specialising in embedded systems, development boards, and IoT cloud solutions. With a Master’s degree in Signal Processing, she combines strong technical knowledge with hands-on industry experience to deliver clear, insightful, and application-focused content. Nidhi began her career in engineering roles, working as a Product Engineer at Makerdemy, where she gained practical exposure to IoT systems, development platforms, and real-world implementation challenges. She has also worked as an IoT intern and robotics developer, building a solid foundation in hardware-software integration and emerging technologies. Before transitioning fully into technology journalism, she spent several years in academia as an Assistant Professor and Lecturer, teaching electronics and related subjects. This background reflects in her writing, which is structured, easy to understand, and highly educational for both students and professionals. At Electronics For You, Nidhi covers a wide range of topics including embedded development, cloud-connected devices, and next-generation electronics platforms. Her work focuses on simplifying complex technologies while maintaining technical accuracy, helping engineers, developers, and learners stay updated in a rapidly evolving ecosystem.

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