The two new generations of high and medium-voltage devices utilise Gallium Nitride, revolutionising digitalization and decarbonization across industries.
Infineon Technologies AG has announced two new generations of high-voltage (HV) and medium-voltage (MV) CoolGaN devices. These advancements now allow customers to utilise Gallium Nitride (GaN) across voltage classes ranging from 40 V to 700 V, expanding its application reach in driving digitalization and decarbonization.
The press release states that the 650 V G5 family caters to applications in consumer electronics, data centres, industrial sectors, and solar energy. Representing the next evolutionary step in GIT-based high voltage products from Infineon, these offerings exhibit cutting-edge technology. The second new family, manufactured using the 8-inch process, also comprises medium voltage G3 devices. These include CoolGaN Transistor voltage classes of 60 V, 80 V, 100 V, and 120 V, along with 40 V bidirectional switch (BDS) devices. Targeted primarily at motor drives, telecommunications, data centres, solar energy, and consumer electronics, the medium voltage G3 products meet diverse application needs.
Some of the key features of the GaN transistors include:
- 100 V – 700 V GaN transistors
- Enhancement mode (e-mode)
- 4 A to 150 A selection range
- Integrated power stages
- Broad package selection
- Ultrafast switching-speed
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Superior FOMs
“Today’s announcement builds nicely on our acquisition of GaN Systems last year and brings to market a whole new level of efficiency and performance for our customers,” said Adam White, Division President of Power & Sensor Systems at Infineon. “The new generations of our Infineon CoolGaN family in high and medium voltage demonstrate our product advantages. They are manufactured in 8 inches, demonstrating the fast scalability of GaN to larger wafer diameters. I am excited to see all the disruptive applications our customers unleash with these new generations of GaN.”
