The high-voltage MOSFETs, which use advanced technology, enhance power efficiency and reliability for industrial, automotive, and renewable energy applications.
Infineon Technologies AG has launched the 600 V CoolMOS 8 series, a new line of high voltage superjunction (SJ) MOSFETs. These devices integrate the attributes of the 600 V CoolMOS 7 series, serving as successors to the P7, PFD7, C7, CFD7, G7, and S7 product families. The MOSFETs facilitate silicon-based solutions that complement Infineon’s portfolio of wide-bandgap products. They feature an integrated fast body diode, making them suitable for server and industrial switched-mode power supply units (SMPS) applications.
The MOSFETs are tailored for use across several industries that require efficient and reliable power solutions. In telecommunications, these devices are crucial for power management in server applications. The automotive industry, particularly electric vehicle (EV) charging, will find these MOSFETs valuable for supporting the transition to electric mobility. Additionally, using these MOSFETs, the renewable energy sector can optimize the performance and efficiency of micro-solar power systems. Electronics designers and engineers developing power management solutions for these applications will also use these devices to enhance product features like power density and efficiency, catering to a broad range of industrial, commercial, and renewable energy needs.
At 400 V, the MOSFETs show a reduction in output capacitance (COSS) compared to the CFD7 and the P7. Additionally, turn-off losses have been decreased, and the reverse recovery charge is lower than that of the CFD7. They also offer the industry’s lowest reverse recovery time and have better thermal performance than previous generations. These MOSFETs provide high efficiency and reliability in soft-switching topologies such as Inductor-Inductor-Capacitor (LLC) and Zero-Voltage Switching (ZVS) phase-shift full-bridge, as well as in hard-switching topologies like Power Factor Correction (PFC) and Two-Transistor Forward (TTF). With optimized on-resistance, these devices enhance power density in Silicon-based superjunction (SJ) technology, reducing resistance to just 7 milliohms.
