Friday, December 5, 2025

Efficient SiC MOSFETs For Power Systems

High-power systems often waste energy and overheat. These SiC MOSFET modules make them faster, cooler and more efficient.

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules
SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules

High-power, medium-voltage applications often struggle with efficiency and thermal management. Systems like battery chargers, photovoltaic inverters, server power supplies, and energy storage setups need components that can handle high currents, switch rapidly, and operate reliably at elevated temperatures, while minimizing energy loss. Traditional power modules can limit performance, generate excess heat, and reduce overall system efficiency.

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To address this, new SiC MOSFET modules from SemiQ have been developed that deliver lower switching losses and improved thermal performance for demanding high-power environments. These modules integrate Schottky Barrier Diodes (SBDs) to further reduce losses under high-temperature operation, making them suitable for fast, efficient power conversion.

The modules are rugged, easy to mount, and feature an isolated backplate with direct heat sink attachment. They are engineered to improve switching speed, reduce energy loss, and simplify integration into power systems. Specific models, like the 7.4 mΩ module, achieve extremely low switching losses and minimal body diode reverse recovery, enhancing overall efficiency.

Each module undergoes rigorous testing, including wafer-level gate-oxide burn-in above 1400 V and avalanche testing up to 800 mJ . Thermal performance is optimized, with junction-to-case thermal resistance ranging from 0.23 °C/W for the lowest RDS(on) module to 0.70 °C/W for the highest, ensuring reliable operation in high-stress conditions.

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Dr. Timothy Han, President at SemiQ said: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at EFY with a deep interest in embedded systems, development boards and IoT cloud solutions.

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