New mobile memory devices combine high data rates, low-voltage operation and industrial temperature tolerance to support power-efficient computing across portable, industrial and connected applications.
Alliance Memory has introduced a new range of low-power double data rate (LPDDR) synchronous dynamic random-access memory (SDRAM) devices, comprising 4Gb LPDDR4 and 8Gb and 16Gb LPDDR4X variants. The devices support clock frequencies of up to 2.133GHz and data rates of up to 4.266Gbps, targeting applications that require high memory bandwidth with reduced power consumption.
The new memory ICs include the 4Gb MT53B128M32D1DT-053ITA, 8Gb AS4C512M16MD4VA-046BIN, and 16Gb AS4C1G16MD4VA-046BIN and AS4C512M32MD4VA-046BIN. Operating at supply voltages as low as 0.6V, the LPDDR4X devices are designed to improve energy efficiency and extend battery life in portable electronics. Their applications include smartphones, tablets, smart speakers, wearables, security and surveillance equipment, networking systems, computing platforms and Internet of Things (IoT) devices incorporating artificial intelligence (AI) and 5G technologies.
The key features are:
- Memory densities spanning 4Gb, 8Gb and 16Gb.
- Single- and dual-channel 16-bit memory configurations.
- Eight internal banks per die.
- Programmable burst lengths of 16 and 32.
- On-chip temperature sensor for self-refresh control.
In terms of performance, the 8Gb and 16Gb LPDDR4X variants operate at 2.133GHz clock frequencies, delivering data rates of 4.266Gbps. The 4Gb LPDDR4 device operates at 1.866GHz and provides a data rate of 3.733Gbps. These memory devices support advanced audio processing, ultra-high-resolution video and bandwidth-intensive embedded applications.
The devices are available in 200-ball very fine-pitch ball grid array (VFBGA) and fine-pitch ball grid array (FBGA) packages. They support fully synchronous operation, programmable read and write burst lengths of 16 and 32, on-the-fly burst selection and configurable drive strength. An integrated temperature sensor adjusts the self-refresh rate according to operating conditions.
The LPDDR4 devices operate across an industrial temperature range of -40°C to +95°C, while the LPDDR4X variants support -40°C to +85°C. Their pin-for-pin compatibility with several comparable memory solutions also allows system designers to upgrade memory configurations without extensive board redesign or component requalification. Samples and production quantities are available, with an indicated lead time of eight weeks. The devices have a stated supply longevity of three years.
