Memory Design Engineer At HCLTech

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Location: Noida

Company: HCLTech

• Qualification: B.E/B.Tech or M.E/M.Tech
• Experience: 3 – 10 years
• Location: Bangalore or Noida
• Employment Type: Permanent
• Requirement Generic Keywords: SRAM, Memory Compiler Design, Memory compiler Characterization, Read/Write Self time, Marginality, Tight Stimuli, UTC, Data Validation, Critical path, Sense amplifier.
• Requirement Specific Keywords: Memory Instance design, compiler range, Dynamic power dissipation.

Mandatory Skills:

1. Sound Knowledge of SRAM Memory compiler and memory instance Design
2. Design Validations e.g., Design Margin closure, SA and Self Time Analysis
3. Should be good in Timing and Power characterization.
4. Should have Communication skill.
5. Candidates should have Good Understanding of various memory architectures e.g., High Speed, High Density, Ultra High density, Single port, and dual port SRAM memory who fall under Experience Range of 5 to 10 years.
6. Candidates should have Good Understanding of Variation and Verification aware design who fall under Experience Range of 5 to 10 years.

Desired Skills

1. To carry out given tasks related with SRAM memory design.
2. Should be able to take ownership of complete SRAM compiler design flow.
3. Should be able to carry out SRAM memory compiler characterization.
4. To interact with layout resources and understand physical design issue.
5. Should be able to mentor junior resources.
6. Follow all the process and practices applicable for his/her designation.