Reference design provides a half-bridge evaluation board for assessing 650V SiC MOSFETs in power conversion applications using the SpeedVal Kit platform.
Toshiba Electronic Devices & Storage Corporation has introduced a reference design for evaluating 650V silicon carbide (SiC) MOSFETs in half-bridge power conversion circuits. Developed for engineers working on power factor correction (PFC) and DC-DC converter applications, the board connects directly to the Half-Bridge Motherboard of the SpeedVal Kit from Wolfspeed, providing a convenient platform for device evaluation and performance comparison. Comprehensive design resources are also included to simplify product development.
The reference design is equipped with two 650V SiC MOSFETs, mounted in a TOLL package to form a half-bridge configuration. Two board variants are available; the first version uses TW027U65C device, while the second version uses TW048U65C device. As both high-side and low-side have the same MOSFET on each board, engineers can compare different MOSFET devices simply by replacing the evaluation board and keeping all test conditions the same.
Designed for use with the SpeedVal Kit, the evaluation board can be plugged into the Half-Bridge Motherboard via Power Daughter Card Interface. Working alongside the gate driver card and buck/boost filter, it evaluates switching characteristics of a boost DC-DC converter application representative of power factor correction applications.
The half-bridge topology allows evaluation of such critical parameters as switching behaviour, efficiency and other key electrical characteristics of the SiC MOSFETs in power systems. The application of a common evaluation platform makes it possible to perform evaluation under consistent test conditions when comparing different models of MOSFETs, helping engineers select suitable devices during the design phase.
The reference design is supplied with a reference guide, a design guide, and supporting design documentation by Toshiba. Thanks to the combination of a common half-bridge topology with SiC MOSFET boards, the reference design provides a practical foundation for designing highly efficient power converters.
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