Sunday, May 26, 2024

Enhancement Mode Gallium Nitride Field Effect Transistors

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The enhancement mode (e-mode) Gallium Nitride Field Effect Transistors (GaN FETs) claims to be highly efficient and small in size, suitable for low and high-voltage applications.

e-mode GaN FETs

Nexperia has launched Gallium Nitride Field Effect Transistors (GaN FETs) in enhancement mode (e-mode), which the company claims are suitable for low voltage applications ranging from 100 to 150V and high voltage applications up to 650V. According to the press release issued by the company, the FETs have high power efficiency and compact size, making them an attractive option for power conversion applications and helping to reduce the bill of materials (BOM). The GaN FETs claim to provide the fastest switching ability and offer better efficiency for low- and high-power conversion applications. GaN-based devices are becoming more prevalent in various power electronics markets, such as server computing, industrial automation, consumer electronics, and telecom infrastructure.

The press release highlights that the FETs come in two packaging with 100V and 150V variations. The devices are claimed to be suitable for various high-power, low-voltage applications, delivering more efficient DC-DC converters in data centers, faster charging for e-mobility and Universal Serial Bus Type-C (USB-C), smaller Light Detection and Ranging (LiDAR) transceivers, lower noise class D audio amplifiers, and more power-dense consumer devices such as mobile phones, laptops, and gaming consoles.

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According to the company’s claim, the new FET range also includes 650V-rated e-mode FETs for high-voltage applications. The devices are claimed to enhance power conversion efficiency in low-power/high-voltage applications such as datacom/telecom, solar, consumer charging, and industrial applications. Additionally, they can be used to design brushless DC motors and micro server drives with higher torque and power precision.

Some of the common characteristics of the FETs include:

  • Configuration: e-mode
  • Maximum temperature: 150 °C
  • Channel type: N-channel
  • Number of transistors: 1

For more information, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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