The first high-voltage diode offers a breakthrough in efficiency, power density, and reliability for solar and electric vehicle charging systems.
Many industries are moving towards using higher power levels while reducing power losses, which is possible by increasing the DC link voltage. Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, the market’s first discrete silicon carbide diode with a breakdown voltage of 2000 V. This diode is well-suited for devices with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A, making it perfect for applications like solar and EV charging.
The diode comes in a TO-247PLUS-4-HCC package, which offers 14 mm creepage and 5.4 mm clearance distance. This allows for higher power density and enables developers to achieve greater power levels in their applications with half the number of components compared to 1200 V solutions, simplifying the design and making it easier to shift from multi-level to 2-level topologies.
Additionally, the CoolSiC Schottky diode 2000V G5 uses the XT interconnection technology to reduce thermal resistance and impedance for better heat management significantly. The diode’s robustness against humidity has been confirmed through HV-H3TRB reliability tests. These diodes have no reverse recovery current or forward recovery and offer a low forward voltage, enhancing system performance.
Some of the key features of the CoolSiC Schottky diode include:
- VRRM = 2000 V
- IF = 80 A
- VF = 1.5 V
- No reverse recovery current
- No forward recovery
- High surge current capability
- Temperature-independent switch behavior
- Low forward voltage
- Tight forward voltage distribution
- Specified dv/dt ruggedness
- .XT interconnection technology
This technology’s benefits include minimized conduction losses and the elimination of reverse recovery current, which significantly enhances efficiency. It allows for high power output with only half the number of parts required by previous solutions, simplifying the overall topology. Additionally, these improvements contribute to increased reliability in system performance.
