Tuesday, May 13, 2025

Industry Leading 1200 V SiC MOSFETs

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The 1200 V SiC MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV charging stations.

Nexperia launches industry leading 1200 V SiC MOSFETs in top-side cooled X.PAK
Nexperia launches industry leading 1200 V SiC MOSFETs in top-side cooled X.PAK

Nexperia has launched a series of 1200 V silicon carbide (SiC) MOSFETs designed for industrial applications, featuring strong thermal stability in a surface-mount (SMD) top-side cooled package called X.PAK. With a compact 14 mm x 18.5 mm design, X.PAK combines the assembly ease of SMD with the cooling benefits of through-hole technology, improving heat dissipation. This release meets the demand for discrete SiC MOSFETs in high-power applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, uninterruptible power supplies (UPS), and EV charging stations.

This product is suitable for engineers working on high-power systems and EV charging stations. It’s also useful for manufacturers needing better cooling and power management, PCB designers and assembly teams using its top-side cooling for easier production, and R&D teams creating advanced energy solutions.

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The X.PAK package enhances thermal performance by reducing heat dissipation through the PCB while maintaining low inductance for surface-mount components and enabling automated board assembly.

The SiC MOSFETs offer excellent figures-of-merit (FoM), particularly in RDS(on), a key factor in conduction losses. While many manufacturers focus on nominal RDS(on) values, which can double as temperatures rise, Nexperia’s devices show only a 38% increase over an operating range of 25 °C to 175 °C, ensuring more stable and efficient performance.

“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” said Katrin Feurle, Senior Director and Head of SiC Discretes & Modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at EFY with a deep interest in embedded systems, development boards and IoT cloud solutions.

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