The industry’s first 24-gigabit DRAM sets new standards with the highest capacity and fastest speed, revolutionizing data centers, AI workstations, and more.
Samsung Electronics Co., Ltd. announced the development of the first 24-gigabit (Gb) GDDR7 DRAM, featuring the highest capacity and speed to date in the industry. The product is designed for next-generation applications and aims to set a new standard in the graphics DRAM sector.
The 24Gb GDDR7 DRAM will be used in sectors requiring high-demand memory solutions, including data centers and AI workstations, beyond traditional uses in graphics cards, gaming consoles, and autonomous vehicles. The DRAM uses Samsung’s 5th-generation 10-nanometer (nm)-class DRAM, which increases cell density by 50% while maintaining the same package size as its predecessor.
The use of three-level Pulse-Amplitude Modulation (PAM3) signaling allows this graphics DRAM to achieve a top speed of 40 gigabits-per-second (Gbps), with the potential to reach 42.5Gbps depending on usage conditions. This is a 25% improvement over previous models.
The company claims to enhance power efficiency in the DRAM by employing techniques such as clock control management and a dual VDD design, previously used in mobile devices, to reduce power consumption. It also improves operational stability under high-speed conditions by minimizing current leakage with power gating design strategies.
“After developing the industry’s first 16Gb GDDR7 last year, Samsung has reinforced its technological leadership in the graphics DRAM market with this latest achievement,” said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. “We will continue to lead the graphics DRAM market by bringing next-generation products that align with the growing needs of the AI market.”
Validation of the 24Gb GDDR7 for next-generation AI computing systems by major GPU customers is set to start this year, with commercial release planned for early next year.
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