The MOSFET offers low resistance, better performance, and high current support for telecom, industrial, and computing applications needing power and reliability.
Vishay Intertechnology, Inc. has launched a 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) package. The SiRS5700DP significantly outperforms previous-generation devices in the PowerPAK SO-8, offering a 68.3% reduction in overall on-resistance and a 15.4% improvement in on-resistance times gate charge. Additionally, it features a 62.5% lower thermal resistance and a 179% increase in continuous drain current capability.
As the company claims, the product can be used by engineers and designers in telecom, industrial, and computing sectors who require high efficiency, power density, and reliability. The MOSFET is well-suited for various applications, including synchronous rectification, DC/DC converters, hot-swap switching, and OR-ing. Target use cases span servers, edge computing, supercomputers, data storage, telecom power supplies, solar inverters, motor drives, power tools, and battery management systems.
Some of the key features of the 150 V TrenchFET Gen V n-channel power MOSFET include:
- TrenchFET Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Leadership RDS(on) minimizes power loss from conduction
- 100 % R g and UIS tested
- Enhance power dissipation and lower RthJC
- Package: PowerPAK SO-8S
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and an exceptional FOM of 336 mΩ*nC, the MOSFET minimizes conduction power losses, enabling designers to meet the efficiency demands of next-generation power supplies, such as 6 kW AI server systems. The package achieves an ultra-low thermal resistance of 0.45 °C/W, supporting continuous drain currents up to 144 A for higher power density and robust safe operating area (SOA) performance. Fully RoHS-compliant and halogen-free, the device meets IPC-9701 temperature cycling standards and undergoes 100% Rg and UIS testing for enhanced reliability.
