Monday, April 29, 2024

MOSFET Bridging The Gap In High-Voltage Designs

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Elevate circuit performance and cost-efficiency in demanding applications with a high-voltage MOSFET featuring extended pin spacing for enhanced durability.

MOSFET

Littelfuse, an industrial technology manufacturing company, has launched CPC3981Z, an 800 V, 100 mA, 45 Ohm, small power N-channel depletion mode MOSFET. The new product’s SOT-223-2L package differs from the standard SOT-223 package by removing a middle pin. This change extends the drain-gate pin spacing from 1.386 millimetres to over 4 millimetres. This greater creepage distance suits higher voltage applications like switch mode power supplies (SMPS) or power factor correction (PFC) startup circuits, allowing designers to forgo expensive conformal coating or potting. The standout feature of the CPC3981Z is its SOT-223-2L package, which offers the necessary extended creepage distance in a compact discrete device. This longer creepage distance enhances circuit durability and reduces costs. 

The CPC3981Z, with its 800 V blocking voltage rating, stands out as the preferred option for various industrial, energy, telecommunications, and LED lighting applications. This includes using normally ON switches, power supplies, startup circuits, solid-state relays, current regulators, and constant current sources. The expanded spacing between the depletion mode MOSFET pins streamlines isolation for wide input voltage power supplies and allows for more concise printed circuit board designs.

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Some of the key specifications of the MOSFET include:

  • Drain-to-Source Voltage: 60 V
  • Gate-to-Source Voltage: ±15 V
  • Pulsed Drain Current: 1 A
  • Total Package Dissipation: 1 1.1 W
  • Operational Temperature: -55 to +125 ºC
  • Storage Temperature: -55 to +125 ºC

“Littelfuse is proud to offer one of the broadest portfolios of depletion-mode MOSFETs in the

industry, and the CPC3981Z further strengthens our position,” said Mark P. Smith, Director of Product Management, Integrated Circuits & MCU at Littelfuse. “This new addition to our low-cost depletion mode MOSFET family, with its new SOT-223-2L package, is an excellent solution for applications that require wide input voltage ranges up to 800 V.”

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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