Tuesday, June 25, 2024

Gate Driver IC for IGBTs and SiC MOSFETs Driving EV Inverters

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  • The RAJ2930004AGM is a compact gate driver IC for EV applications.
  • The gate driver IC can provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

The RAJ2930004AGM from Renesas is a newly released Gate driver IC for driving EV inverters. It is capable of driving both IGBTs and SiC MOSFET and has a built-in 3.75kVrms (kV root mean square) isolator, which is higher than the 2.5kVrms isolator in the previous generation products.

The RAJ2930004AGM IC boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns (nanosecond) or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. It can support power devices with a withstand voltage of up to 1200V, which makes it suitable to employ in cost-effective inverter systems.

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Gate drivers are essential components in power electronics, as they control the gate of power electronic devices such as MOSFETs, IGBTs, and thyristors. They serve several essential functions: Isolation, EMI reduction, signal shaping, drive strength, etc. Gate drivers also provide an interface between the inverter control MCU and the IGBTs and SiC MOSFETs that deliver power to the inverter

The gate driver MOSFET comes in a compact SOIC16 package. The IC offers multiple protection and fault detection functions such as the on-chip active Miller clamp, soft turn-off, overcurrent protection (DESAT protection), under-voltage lockout (UVLO), and fault feedback. The MOSFET driver can be employed in harsh working conditions and has a wide operational temperature range from -40 to 125°C (Tj:150°C max.)

“Renesas is pleased to offer the second-generation gate driver IC for automotive applications with high isolation voltage and superior CMTI performance,” said Akira Omichi, Vice President of Renesas’ Automotive Analog Application Specific Business Division. “We will continue to drive application development for EVs by offering solutions that minimize power loss and meet high levels of functional safety in our customers’ systems.”

Key Features of the RAJ2930004AGM Gate Driver IC

• Operating temperature range: -40 to 125°C (Tj:150°C max.)
• Withstand Isolation voltage: 3.75kVrms
• CMTI (Common Mode Transient Immunity): 150V/ns
• Output peak current: 10A

Protection/fault detection functions
• On-chip active Miller clamp
• Soft turn-off
• Overcurrent protection (DESAT protection)
• Under-voltage lockout (UVLO)
• Fault feedback

The Renesas MOSFET driver can help increase EV adoption by allowing engineers to build cost-efficient inverters, thereby minimizing environmental impacts.


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