Wednesday, December 7, 2022

High-density STT-MRAM for Aerospace Application

By Sharad Bhowmick

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High-density STT-MRAM series memory with an ultrafast read and write bandwidth of 400 Mbps offering high reliability and protecting critical system data under all conditions.

Everspin Technologies has released a high-density STT-MRAM series. The EMxxLX series offers the industry’s first xSPI serial interface. It is one of the highest-performing persistent memory available in the market. It offers a full read and write bandwidth of 400 megabytes per second with a clock frequency of 200MH. The STT-MRAM technology is less susceptible to the effects of radiation which makes it highly reliable in high-radiation environments. The high bandwidth and ultrafast clock speed make it suitable for use in critical applications which requires low power, low latency and high security. The device is suitable for use in various applications including process automation and control, aeronautics/avionics, medical, gaming, etc.

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According to the company, the EMxxLX offers the industry’s first xSPI serial interface based on Everspin’s unique STT-MRAM technology. It’s the only existing persistent memory in the market to offer a full read and write bandwidth of 400 megabytes per second via eight I/O signals with a clock frequency of 200MHz. The EMxxLX family is capable of replacing existing solutions, such as SRAM, BBSRAM, FRAM, NVSRAM, and NOR flash devices. The low-power family of devices delivers the highest combination of performance, endurance, and retention available and is offered in densities from 8 to 64 megabits.

“In the fast-growing Industrial IoT and embedded systems markets, customers, more than ever, need to protect critical system data under all conditions, particularly in the event of power loss and without concern for wear out or data integrity issues,” said Sanjeev Aggarwal, President, and CEO of Everspin Technologies. “Our EMxxLX MRAM devices offer SRAM-like performance with low latency, maintain memory without requiring power, and have extremely high endurance. Additionally, they are compatible with other memory types and easy to design in.”


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