IGBT Chip With Low Static Losses For Rugged Industrial Applications

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  • Infineon Technologies introduces the TRENCHSTOP IGBT7 chip with a range of current ratings
  • Suitable for use in applications such as industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies

Infineon Technologies now offers the TRENCHSTOP IGBT7 chip. The device comes in a TO-247 with a breakdown voltage of 650 V and consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A.

It can easily be used for applications such as industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies.

Based on the new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses. For the same current class, the on-state voltage is reduced by ten per cent, bringing significant loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequency.

Low Saturation Voltage

The IGBT T7 technology has a very low saturation voltage (VCE(sat)) and is co-packed with an emitter controlled 7th generation (EC7) diode, which provides for a 150 mV lower forward voltage (VF) drop and improved reverse-recovery softness.

The device features superior controllability and excellent EMI performance. It can easily be adjusted to provide the application-specific best ratio of dv/dt and switching losses. The 650V TRENCHSTOP IGBT7 provides short circuit robustness as required in the applications. Additionally, it has passed the JEDEC based HV-H3TRB (High Voltage High Humidity High Temperature Reverse Bias) test, proving ruggedness in highly humid industrial environments.

The discrete 650 V TRENCHSTOP IGBT7 can be ordered now.


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