Power GaN FETS With Low Power Loss for EVs, 5G and IoT Applications

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  • element14 has made available Nexperia’s Power Gallium Nitride (GaN) FET range that allows developing efficient power systems at low cost
  • GaN technology helps reduce power losses and increase a battery’s storage

element14 has announced the availability of Nexperia’s newest and innovative Power Gallium Nitride (GaN) FET range that can deliver improved density and efficiently use power in a small form factor, enabling the development of efficient systems at a lower cost, and providing the potential to transform power performance in electric vehicles, 5G communications, IoT and more. This innovative range also provides solutions to design engineers looking to reduce Co2 and move towards increased electrification.

Delivering wide benefits

GaN technology helps overcome many limitations of existing technologies, such as silicon-based IGBTs and SiC for delivering direct and indirect performance benefits to a range of power conversion applications. Concerning electric vehicles, GaN technology helps reduce power losses that can impact the range of a vehicle. More efficient power conversion also reduces the need for cooling systems that dissipate generated heat, reducing the vehicle’s weight and system complexity. This in turn also leads to a longer operating range of a battery. Power GaN FETs are also well positioned for applications in data centres, telecom infrastructures, and industrial applications.

GaN FETs deliver superior performance in solutions such as hard switching for AC-DC Totem pole PFC applications, LLC phase-shift full-bridge (resonant or fixed frequency) for soft-switching applications, all DC-AC inverter topologies and AC-AC matrix converters using bidirectional switches.

Key benefits include:
› Easy gate drive, low RDS(on), fast switching
› Excellent body diode (Low Vf), low Qrr
› High ruggedness
› Low dynamic RDS(on)
› Stable switching
› Rugged gate bounce immunity (Vth ~ 4 V)

“Nexperia is renowned for its extensive portfolio of innovative semiconductor products and we are pleased to further support our customers with the addition of the power GaN FETs to the element14 range. GaN technology is at the cutting edge of efficient power design and these new products will be a key component to innovative IoT, automotive and communication designs of the future,” said Lee Turner, Global Head of Semiconductors and SBC, Farnell and element14.


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