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Texas Instruments’ DRV8300U Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. A gate driver is a power amplifier that accepts a low power input from a controller IC and produces the...
Renesas Electronics Corporation has introduced AE5 generation of Si IGBTs for EV inverters. The AE5 process for IGBTs has a smaller footprint and higher efficiency making it suitable for space-constrained power-intensive applications. The AE5 IGBTs offer one of the...
Kemet has announced a new series of AEC-Q200 qualified common mode chokes. The  SCF-XV has been designed for high voltage automotive and harsh environment industrial EMI filtering applications and offers up to 1,000 V AC/DC and is rated for...
ROHM has added new MOSFETs to its existing PrestoMOS lineup of 600V Super Junction MOSFETs. The R60xxVNx series provides a low on-resistance along with one of the fastest reverse recovery times amongst all the competing solutions. The MOSFET series...
element14 has made available Nexperia's Power Gallium Nitride (GaN) FET range that allows developing efficient power systems at low cost GaN technology helps reduce power losses and increase a battery's storage element14 has announced the availability of Nexperia’s newest...
 
 

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