A half-bridge power module combines low conduction and switching losses with compact integration to improve power density and reduce cooling requirements in electric vehicles, solar inverters, and industrial motor drives.
StarPower Semiconductor’s MD53HFL120L2S_B20 is a 1200 V, 120 A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module designed for high-efficiency power conversion in industrial and automotive applications. Its integrated half-bridge topology, low on-resistance, and compact construction support power-dense designs while reducing energy losses and cooling requirements.
The module integrates two dual N-channel SiC MOSFETs connected in series to form a half-bridge circuit, making it suitable for inverter and converter stages. It features a drain-source on-resistance (RDS(on)) of 5.3 mΩ at 25°C and an optimised freewheeling diode to minimise conduction losses and improve switching performance. Its SiC technology also supports operating temperatures of up to 150°C, enabling use in demanding thermal environments.
The key features are:
- Available with standard-pin and press-fit-pin configurations.
- Half-bridge topology integrates two series-connected MOSFETs.
- Supports migration from existing silicon IGBT-based layouts.
- Optimised for cost-sensitive industrial and mid-range applications.
- Designed for high power density in compact power-electronics assemblies.
The module uses aluminium nitride-active metal brazed (AlN-AMB) substrate technology to support thermal management. Its low-inductance design and compatibility with printed circuit board (PCB) mounting simplify integration into compact power electronics assemblies. The package is also designed to provide efficient cooling through its direct-bonded copper (DBC) substrate. These features can help designers reduce heatsink requirements, optimise system dimensions, and improve overall power density.
For electric mobility, the module can be used in main and auxiliary electric vehicle drives and onboard chargers. Its switching and thermal characteristics also make it suitable for central and string solar inverters, uninterruptible power supply (UPS) systems, and high-efficiency switched-mode power supplies (SMPS). Other potential applications include DC servo systems and robotic drives, where efficient power conversion and compact hardware are important.
The module is designed to integrate into existing silicon insulated-gate bipolar transistor (Si-IGBT) layouts, potentially simplifying the transition to SiC-based power electronics. This compatibility can help manufacturers upgrade power-conversion stages without redesigning their entire system architecture.
By combining a 1200 V voltage rating, a 120 A current class, low on-resistance, and an integrated half-bridge structure, the module targets applications requiring efficient switching, thermal performance, and high power density in space-constrained designs.
