Heat, power loss, and switching issues slow high-voltage systems. A 1200V silicon carbide platform can fix them. Here’s what makes it different.
Navitas Semiconductor has introduced its 5th-generation GeneSiC silicon carbide (SiC) platform, adding a new 1200V MOSFET family. The new devices improve power conversion performance with a 35% improvement in the balance between conduction and switching losses compared to the previous 1200V generation. Lower switching losses mean systems can run cooler and operate at higher switching frequencies. The technology is designed for AI data centers, grid and energy infrastructure, and industrial electrification.
The new MOSFETs use a High Voltage (HV) SiC Trench-Assisted Planar (TAP) structure. This design combines the strength and reliability of a planar gate with a trench structure in the source region to improve electrical performance. The architecture is more compact than before and is built to support efficiency and long operating life in high-voltage power systems.
Switching performance has also improved. The devices show about 25% better QGD/QGS ratio, which helps control switching behavior. A stable high threshold voltage reduces the risk of parasitic turn-on. This ensures predictable gate drive performance, even in systems with high electrical noise.
Dynamic performance is improved by optimizing the RDS(ON) × EOSS characteristic. In addition, the platform includes a soft body-diode design. This reduces electromagnetic interference (EMI) and supports smoother commutation during high-speed switching.
The 1200V platform complements the company’s 4th-generation GeneSiC portfolio, which includes 2300V and 3300V ultra-high-voltage technologies. Together, these solutions expand its silicon carbide offerings across standard high-voltage and ultra-high-voltage applications.
“Our customers are redefining the boundaries of power conversion in AI data centers and energy infrastructure, and Navitas is marching along with them in every step of the way,” said Paul Wheeler, VP & GM of Navitas’ SiC Business Unit. He added, “significant technological improvements in our 5th generation GeneSiC technology underscore Navitas’ commitment to delivering industry-leading performance and reliability in silicon carbide MOSFETs.”
