The TVS diode series offers single-component protection for SiC MOSFET gate drivers, simplifying designs and improving overvoltage protection in EV systems.
Littelfuse, Inc. has announced the launch of its TPSMB Asymmetrical TVS Diode Series. The company claims this product is the first asymmetrical transient voltage suppression (TVS) diode explicitly designed to protect Silicon Carbide (SiC) MOSFET gate drivers in automotive applications. The diode addresses the need for overvoltage protection in electric vehicle (EV) systems, offering a single-component solution that replaces multiple Zener diodes or TVS components previously used for gate driver protection.
The TPSMB Asymmetrical TVS Diode Series provides protection for SiC MOSFET gate drivers, which are vulnerable to overvoltage events due to their faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The asymmetrical design accommodates the differing positive and negative gate driver voltage ratings of SiC MOSFETs, ensuring performance in automotive power applications such as onboard chargers (OBCs), EV traction inverters, I/O interfaces, and Vcc buses. These applications require overvoltage protection to maintain performance, durability, and efficiency.
The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers several features to protect SiC MOSFET gate drivers in automotive applications. One advantage is its ability to provide single-component SiC MOSFET gate driver protection, eliminating the need for multiple Zener or TVS diodes and reducing component count. The diode is designed for asymmetrical gate driver voltage protection, addressing the different negative and positive voltage ratings of SiC MOSFETs.
The diode comes in a DO-214AA package, suitable for space-constrained automotive designs. It is AEC-Q101-qualified, ensuring reliability for automotive applications. The TPSMB Asymmetrical Series offers protection with power dissipation capabilities of up to 600W peak pulse power dissipation, effectively protecting against transient overvoltage events. The diode also features a low clamping voltage, protecting negative gate drives.
Charlie Cai, Director of Product Management, Protection Business, Littelfuse, emphasizes the value this product brings to automotive engineers: “The TPSMB Asymmetrical TVS Diode Series offers an innovative solution for SiC MOSFET gate driver protection, eliminating the need for multiple components and simplifying the design process for engineers. Its compact, reliable design ensures that critical automotive power systems are safeguarded against overvoltage events, supporting the continued advancement of electric vehicles and other high-performance applications.”
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