A range of GaN-based devices offering performance characteristics such as sub-milliohm resistance, fast switching and thermally efficient performance for power conversion in applications like artificial intelligence, robotics and renewable energy systems is now available.
Nexperia has extended its product range in GaN power semiconductors with the launch of its latest family of low- to medium-voltage GaN field-effect transistors (FETs). This family of devices, which offers high power density and efficient power conversion performance, comes with voltage ratings ranging from 18 V to 200 V, thereby catering to the needs of AI datacentres, humanoid robotics, renewable energy systems, battery-powered devices and DC-DC converters.
This latest generation of GaN FETs from Nexperia offers an on-state resistance (RDS(on)) of up to 0.32 mΩ and sub-milliohm performance within compact packaging that occupies a PCB area of only around 10 mm². Besides, owing to their excellent RDS(on) x QG and RDS(on) x QOSS figures of merit, the switching losses can be significantly reduced.
The key features are:
- Voltage ratings spanning 18 V to 200 V.
- RDS(on) as low as 0.32 mΩ.
- Low gate-charge and output-capacitance figures of merit.
- Compact 3.3 mm × 3.3 mm and 3 mm × 5 mm PQFN packages.
- Exposed-pad construction for improved thermal management.
These components feature devices with 100 V to 200 V ratings for isolated primary and secondary stage power converters and non-isolated step-down converters. The products include applications of half/ full bridge LLC resonant converters and synchronous rectification in 48 V power delivery systems in AI infrastructure.
18 V to 40 V rated devices can be used for secondary side synchronous rectification and low voltage power distribution, converting 12V supply rails to processor core voltages less than 1 V.
For motor control applications, low resistance and fast switching performance capabilities allow using of the products for controlling of 3 phase brushless DC (BLDC) and Permanent Magnet Synchronous Motor (PMSM).
In particular, the flagship device in the family is the GANE0R8-100QTM with 100V GaN FET rating and typical RDS(on) equal 0.75 mΩ in 3mm×5mm PQFN package. There are 5 additional devices that cover 25 V to 200 V voltage ranges and have typical RDS(on) ranging from 0.37 mΩ. Additionally, there are 2 more devices, including 18 V GANE0R3-015QTL with typical RDS(on) equal 0.32 mΩ that will be available at Q1 2027. In total, there are 8 devices that use thermally enhanced packages with exposed pads.
