HomeSpecialIndustry's First Mass Production Of 9th-Gen V-NAND

Industry’s First Mass Production Of 9th-Gen V-NAND

The start of mass production for a one-terabit triple-level cell vertical NAND enhances performance with the smallest cell size and a 50% increase in bit density.

V-NAND

Samsung Electronics has announced the start of mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND). This development strengthens its position in the NAND flash market. The 9th-generation V-NAND has the industry’s smallest cell size and thinnest mould, achieving a 50% increase in bit density over the previous generation. Innovations, including cell interference avoidance and life extension techniques, have improved product quality and reliability. Additionally, the elimination of dummy channel holes has reduced the planar area of the memory cells.

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The company also highlighted its “channel hole etching” technology, underscoring its process capabilities. This technology forms electron pathways by stacking mould layers, enhancing fabrication productivity by allowing simultaneous drilling through the industry’s highest cell layer counts in a double-stack structure. This capability is critical as cell layer counts increase and more complex etching techniques are required.

The 9th-generation V-NAND has the new “Toggle 5.1” NAND flash interface, which boosts data input/output speeds by 33% to 3.2 gigabits-per-second (Gbps). With this advancement, Samsung is set to strengthen its standing in the high-performance SSD market, extending support for PCIe 5.0. Compared to the previous generation, power consumption has been reduced by 10% due to advancements in low-power design.

“We are excited to deliver the industry’s first 9th-gen V-NAND, bringing future applications leaps forward. To address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Products & Technology of the Memory Business at Samsung Electronics. “Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs of the coming AI generation.”

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Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at Electronics For You, specialising in embedded systems, development boards, and IoT cloud solutions. With a Master’s degree in Signal Processing, she combines strong technical knowledge with hands-on industry experience to deliver clear, insightful, and application-focused content. Nidhi began her career in engineering roles, working as a Product Engineer at Makerdemy, where she gained practical exposure to IoT systems, development platforms, and real-world implementation challenges. She has also worked as an IoT intern and robotics developer, building a solid foundation in hardware-software integration and emerging technologies. Before transitioning fully into technology journalism, she spent several years in academia as an Assistant Professor and Lecturer, teaching electronics and related subjects. This background reflects in her writing, which is structured, easy to understand, and highly educational for both students and professionals. At Electronics For You, Nidhi covers a wide range of topics including embedded development, cloud-connected devices, and next-generation electronics platforms. Her work focuses on simplifying complex technologies while maintaining technical accuracy, helping engineers, developers, and learners stay updated in a rapidly evolving ecosystem.

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