Thursday, June 13, 2024

Industry’s First Mass Production Of 9th-Gen V-NAND

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The start of mass production for a one-terabit triple-level cell vertical NAND enhances performance with the smallest cell size and a 50% increase in bit density.


Samsung Electronics has announced the start of mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND). This development strengthens its position in the NAND flash market. The 9th-generation V-NAND has the industry’s smallest cell size and thinnest mould, achieving a 50% increase in bit density over the previous generation. Innovations, including cell interference avoidance and life extension techniques, have improved product quality and reliability. Additionally, the elimination of dummy channel holes has reduced the planar area of the memory cells.

The company also highlighted its “channel hole etching” technology, underscoring its process capabilities. This technology forms electron pathways by stacking mould layers, enhancing fabrication productivity by allowing simultaneous drilling through the industry’s highest cell layer counts in a double-stack structure. This capability is critical as cell layer counts increase and more complex etching techniques are required.

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The 9th-generation V-NAND has the new “Toggle 5.1” NAND flash interface, which boosts data input/output speeds by 33% to 3.2 gigabits-per-second (Gbps). With this advancement, Samsung is set to strengthen its standing in the high-performance SSD market, extending support for PCIe 5.0. Compared to the previous generation, power consumption has been reduced by 10% due to advancements in low-power design.

“We are excited to deliver the industry’s first 9th-gen V-NAND, bringing future applications leaps forward. To address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product,” said SungHoi Hur, Head of Flash Products & Technology of the Memory Business at Samsung Electronics. “Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs of the coming AI generation.”

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Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.


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