Friday, April 19, 2024

Level-Shift Three-Phase SOI Driver IC Offers Superior Robustness

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The device power protection in the form of over-current protection and shoot-through for safe industrial drives and embedded inverter applications

Enhancing the silicon-on-insulator (SOI) technology is the latest extension of level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver termed the 6ED2230. The device provides negative VS transient immunity, superior latch-up immunity, fast over-current protection and the monolithic integration of real bootstrap diodes. These unique features reduce help BOM and enable a more robust design for industrial drives and embedded inverter applications.

The 6ED2230 provides 350 mA / 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a +/-5 per cent reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 Ω.

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Reliable and robust

Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

The EiceDRIVER 6ED2230 can be ordered now in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions) from Infineon Technologies. This package has a reduced pin-count leading to a superior 2 kV ESD rating according to human-body model (HBM).


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