Suited for minimal conduction lossses and meet high system performance requirements for industrial and automotive
MOSFETs switched at low frequency, high-power product designs must meet several key characteristics: minimised conduction losses, optimal thermal behaviour and enable compact, lighter systems – all while maintaining the highest quality at a low cost.
Meeting these requirements are two new devices for static switching applications: the industrial-grade CoolMOS S7 10 mΩ and the automotive-grade CoolMOS S7A.
The CoolMOS S7 10 mΩ has a unique low on-resistance (R DS(on)) for 600 V superjunction MOSFETs, making it ideal for applications where minimal conduction losses are critical, such as off-the-shelf solid-state relays (SSR).
The automotive-grade CoolMOS S7A addresses system performance requirements set by solid-state circuit breakers (SSCB) and diode paralleling/replacement for high power/performance designs in automotive applications, such as the High Voltage (HV) eFUSE, HV eDisconnect battery disconnect switch as well as on-board chargers.
Additionally, they have been integrated into an innovative top-side cooled (TSC) QDPAK SMD package, which offers excellent thermal behaviour, making it a smaller alternative to THD devices such as TO-247. Moreover, with moving from THD to a surface-mounted device with QDPAK, a 94 per cent reduction of height can be achieved, enabling higher power density solutions. With the low conduction losses of the CoolMOS S7 10 mΩ and the CoolMOS S7A, designers can limit the size of heat sinks by up to 80 per cent and extend the current and voltage ratings without altering the form factor.
As a result, the new devices offer the best price-performance ratio at the highest quality standards, placing even greater emphasis on conduction performance, energy efficiency, power density and improved thermal resistance.
The CoolMOS S7 10 mΩ and CoolMOS S7A devices can be ordered now in a TSC QDPAK package (HDSOP-22-1) from Infineon Technologies AG.
