The SiC Schottky diode in a TO-247-2 package simplifies design transitions, reduces component count, and enhances system performance in solar inverters and EV chargers.
As industrial applications demand higher power levels with minimal losses, increasing DC link voltage is a key solution. Infineon Technologies AG addresses this need with its CoolSiC Schottky Diode 2000 V G5 family—the industry’s first discrete 2000 V silicon carbide (SiC) diodes, introduced in September 2024. Expanding the portfolio, the company now offers the diode in a TO-247-2 package, ensuring pin compatibility with existing designs.
The CoolSiC Schottky Diode 2000 V G5 in TO-247-2 is optimized for applications with DC link voltages up to 1500 V DC, making it ideal for solar inverters and EV chargers. Available in 10 A to 80 A ratings, the diode supports higher power levels while reducing component count by up to 50% compared to 1200 V solutions. This simplification enables a smooth transition from multi-level to two-level topologies, enhancing system efficiency.
The key features are:
- No reverse recovery current
- No forward recovery
- High surge current capability
- Temperature-independent switching behavior
- Low forward voltage drop
- Consistent forward voltage characteristics
It integrates .XT interconnection technology into the TO-247-2 package, significantly improving thermal resistance and heat dissipation. With HV-H3TRB reliability validation, the diodes ensure high humidity robustness. They also feature zero reverse and forward recovery, along with a low forward voltage, further optimizing system performance. Designed as a perfect companion to the company’s 2000 V CoolSiC MOSFETs in the TO-247Plus-4 HCC package, the diode enhances high-voltage applications. Besides TO-247-2, the CoolSiC Schottky Diode 2000 V is also available in the TO-247PLUS-4 HCC package.
The diode 2000 V G5 in TO-247-2 is available now, along with an evaluation board and a matching gate driver portfolio. For more details, click here.
