Thursday, December 12, 2024

Efficient MOSFET Enhances Reliability In AI Servers

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With improved safe operating area (SOA), reduced losses, and compact design flexibility, this advanced solution drives high efficiency and reliability across industries.

Infineon Technologies AG has introduced the OptiMOS 5 Linear FET 2, MOSFET designed to enhance safe hot-swap functionality in AI servers and telecom applications. This advanced MOSFET strikes an ideal balance between the low R_DS(on) of trench MOSFETs and the robust safe operating area (SOA) of traditional planar MOSFETs, ensuring reliable operation with minimal energy losses.

The Linear FET 2 builds on the capabilities of its predecessor, delivering enhanced performance with improved SOA at elevated temperatures, reduced gate leakage, and expanded packaging options. This expanded packaging portfolio allows more MOSFETs to operate in parallel per controller, lowering bill-of-materials (BOM) costs and increasing design flexibility. These improvements cater to industries requiring high reliability, such as battery management systems (BMS) and other applications where component efficiency is critical.

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The key benefits are:

  • Rugged linear mode operation
  • Low condition losses
  • Improved gate driver compatibility
  • Better current sharing

The FET 2, offered in a TO-leadless (TOLL) package, provides a 12-fold increase in SOA at 54 V for 10 ms, and a 3.5-fold increase at 100 µs when compared to standard MOSFETs with similar R_DS(on) ratings. This enhancement significantly improves current distribution in BMS applications, especially during short-circuit events where balanced current sharing among parallel MOSFETs is essential for maintaining system integrity and reliability.

With its optimized transfer characteristics and robust SOA, the Linear FET 2 reduces component count by up to 60% in high-current applications. This enables compact, high-density designs ideal for applications, including power tools, e-bikes, e-scooters, forklifts, battery backup systems, and battery-powered vehicles. The result is a high-efficiency solution that meets the rigorous demands of modern energy management.

For more details, click here.

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.

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