The transistors offering ultra-low resistance, superior thermal performance, and industry-standard packaging for seamless GaN integration in power applications.
Infineon Technologies AG is setting a new industry benchmark with the launch of its CoolGaN G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1). These new devices address the lack of standardized GaN packaging, enabling customers to benefit from multi-sourcing options and seamless integration with silicon-based designs.
These compact, high-performance transistors enable low-resistance connections and reduced parasitics, ensuring optimized efficiency and high-power output in familiar industry-standard footprints.The key features include:
- 100 V CoolGaN G3 transistor: 5×6 RQFN package, ultra-low on-resistance 1.1 mΩ
- 80 V CoolGaN G3 transistor: 3.3×3.3 RQFN package, resistance 2.3 mΩ
The advanced package design enhances thermal performance. The improved thermal conductivity and optimized heat dissipation, facilitated by a larger exposed surface area and higher copper density, contribute to superior thermal cycling robustness. By aligning GaN transistors with standard silicon MOSFET packages, Infineon simplifies GaN adoption, making it easier for power designers to implement cutting-edge efficiency in datacom, consumer, and industrial power applications.
Samples of IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.“The new transistors meet industry demand for a standardized footprint, ensuring easier handling and faster time-to-market,” said Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
