Integrates two symmetrical 650V gallium nitride (GaN) power transistors in addition to having good circuit protection
It integrates two symmetrical 650V gallium nitride (GaN) power transistors with 225mΩ RDS(on), alongside optimised gate drivers and circuit protection to simplify the design of high-efficiency power-conversion applications up to 200W.
Input voltage tolerance from 3.3V to 15V allows MasterGaN4 to be controlled by connecting the packages directly to Hall-effect sensors or a CMOS device such as a microcontroller, DSP, or FPGA.
Leveraging the higher operating frequencies enabled by the superior switching performance of GaN transistors, as well as their increased efficiency that reduces thermal dissipation, designers can now choose small magnetic components and heatsinks to build more compact and lightweight power supplies, chargers and adaptors.
MasterGaN4 is ideally suited to use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward. The wide supply-voltage range, from 4.75V to 9.5V allows convenient connection to an existing power rail. Built-in protection further simplifies design including:
- Gate-driver interlocks
- Low-side and high-side under-voltage lockout (UVLO)
- Over-temperature protection
There is also a dedicated shutdown pin.
ST is also introducing a dedicated prototype board (EVALMASTERGAN4) that provides a complete set of features to drive the MasterGaN4 with a single or complementary driving signal. An adjustable deadtime generator is also provided. The board gives the flexibility to apply a separate input signal or PWM signal, insert an external bootstrap diode, separate the logic and gate-driver supply rails, and use a low-side shunt resistor for peak-current-mode topologies.
MasterGaN4 is in production now in a 9mm x 9mm x 1mm GQFN package that has over 2mm creepage distance for safe use in high-voltage applications. The EVALMASTERGAN4 board is also in production.