High-Power Transistor That Offers 2000W of Pulsed RF Energy

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  • The product from Ampleon is suitable for high-frequency applications
  • Can operate from 30 V to 60 V

The LDMOS high-power transistor, ART2K0PEG from Ampleon provides 2000 W of pulsed RF energy for ISM applications in the HF to 400 MHz frequency band. It offers up to 28.5 dB of gain. This enables the device to support plasma generators, MRI systems, CO2 lasers and particle accelerators.

High breakdown voltage facilitates class E devices to operate up to 50 volts VDS while the ART2K0PEG is qualified for up to a maximum VDS of 65 V. The device ranges from 30 volts to 65 volts. Integrated dual-sided ESD protection enables class C operation and complete switch-off of the transistor.

Other features

  • Easy power control
  • Excellent ruggedness with no device degradation
  • High drain efficiency of 73 percent
  • Excellent thermal stability
  • RoHS compliant

This “gull-wing”, SMT transistor can withstand load mismatches corresponding to a voltage standing wave ratio (VSWR) of 65:1. Additional applications can be found in radio and VHF TV broadcast transmitters as well as HF communications and radar systems in the aerospace industry.

The product is now available from RFMW.


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