The chips help electric vehicles use less energy, go farther, and save costs, making them more efficient and eco-friendly.
The electric vehicle (EV) market is growing rapidly, with strong sales of both battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). By 2030, EVs are expected to make up about 45% of all vehicle production—more than double the 20% share in 2024. To meet the rising demand for high-voltage automotive IGBT chips, Infineon Technologies AG has introduced a new generation of products. These include the third-generation EDT3 (Electric Drive Train) chips for 400 V and 800 V systems and the RC-IGBT chips designed specifically for 800 V systems. Both are optimized to improve the performance of electric drivetrain systems, making them well-suited for automotive use.
The EDT3 and RC-IGBT bare dies are built for high reliability and quality, allowing customers to design custom power modules. Compared to the previous generation, EDT3 chips reduce total power losses by up to 20% under high load conditions while maintaining efficiency at low loads. These improvements come from design optimizations that lower chip losses and support higher junction temperatures, striking a balance between performance and efficiency. As a result, EVs using EDT3 chips benefit from longer driving range and lower energy use, supporting more sustainable and cost-effective transportation.
“Infineon, as a leading provider of IGBT technology, is committed to delivering outstanding performance and reliability”, says Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon Technologies. “Leveraging our steadfast dedication to innovation and decarbonization, our EDT3 solution enables our customers to attain ideal results in their applications.”
“Infineon, as Leadrive's primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,” said Dr. Ing. Jie Shen, Founder and General Manager of Leadrive. “The latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.”
